Influence of Excitation Frequency on Oriented (10(-1)0) Growth of Aluminium Nitride Thin Films by Pecvd
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چکیده
HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés. INFLUENCE OF EXCITATION FREQUENCY ON ORIENTED (10(-1)0) GROWTH OF ALUMINIUM NITRIDE THIN FILMS BY PECVD N. Azema, J. Durand, R. Berjoan, J. Balladore, L. Cot
منابع مشابه
Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
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